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May 1994
NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL
TC = 25C unless otherwise noted
NDP610A NDP610AE NDB610A NDB610AE 100 100 20 40 26 104 100 0.67
NDP610B NDP610BE NDB610B NDB610BE
Units V V V V
24 96
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP610.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 26 A
Type NDP610AE NDP610BE NDB610AE NDB610BE
Min
Typ
Max 250 26
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 13 A ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP610A NDP610AE NDB610A TJ = 125C NDB610AE NDP610B NDP610BE NDB610B TJ = 125C NDB610BE NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 13 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 26 2 1.4 3 2.3 0.048 0.086 100 250 1 100 -100 4 3.2 0.065 0.13 0.08 0.16 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 12 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
24
A
10
16 1430 280 85 1800 500 200
S pF pF pF
Ciss Coss Crss
NDP610.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 50 V, ID = 26 A, VGS = 10 V, RGEN = 7.5
Type ALL ALL ALL ALL
Min
Typ 11 72 40 52 47 8 22
Max 20 120 65 85 65
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 80 V, ID = 26 A, VGS = 10V
ALL ALL ALL NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 26 A
24
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP610A NDP610AE NDB610A NDB610AE NDP610B NDP610BE NDB610B NDB610BE
104
A
96
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 13 A VGS = 0 V, IS = 26 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.88 0.83 108 7.4
1.3 1.2 155 11
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 C/W C/W
Notes: 1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP610.SAM
Typical Electrical Characteristics
70 2.5
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A) 60 50 40 30 20 10 0 0
12
10 8.0 7.0
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V GS = 5V 6.0
2
7.0 8.0 10
1.5
12 20
6.0
1
5.0
2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V)
8
0.5
0
10
20 I
D
30 40 50 , DRAIN CURRENT (A)
60
70
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.5
4
I D = 13A
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
V GS = 10V
2 R DS(on), NORMALIZED
V GS = 10V
3
R DS(ON) , NORMALIZED
TJ = 125C
2
1.5
25C
1
1
-55C
0.5 -50
-25
0
25 50 75 100 125 T , JUNCTION TEMPERATURE (C)
J
150
175
0 0 20 40 I D , DRAIN CURRENT (A) 60 80
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
40 GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V DS = 10V
30
TJ = -55C 25 125
V DS = V
1.1 1 0.9 0.8 0.7 0.6 0.5 -50
GS
I D = 250A
ID , DRAIN CURRENT (A)
20
10
0 2 3 4 5 6 7 8 V GS , GATE TO SOURCE VOLTAGE (V)
Vth , NORMALIZED
-25
0
25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP610.SAM
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
30
I
1.1
D
= 250A
I , REVERSE DRAIN CURRENT (A) 10
V GS = 0V TJ = 125C 25C
1
BV DSS , NORMALIZED
1.05
-55C
1
0.95
0.1
0.9 -50
-25
0
25 50 75 100 125 T J , JUNCTION TEMPERATURE (C)
150
175
S
0.01 0.2
0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20
3000 2000 , GATE-SOURCE VOLTAGE (V)
I D = 26A C iss
15
V DS = 20V
50 80
1000 CAPACITANCE (pF)
C oss
300 200
10
5
100
V GS = 0 V
0.2 V 0.5
DS
V 0 1 2 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 50 0 20 40 Q g , GATE CHARGE (nC) 60 80
50 0.1
Figure 9. Capacitance Characteristics.
GS
f = 1 MHz
C rss
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on
t off tr
90%
t d (off)
90%
VIN
D
RL V OUT
VOUT
10%
tf
VGS
R GEN
10%
INVERTED
G
DUT 90% S
V IN
10%
50%
50%
PULSE W IDTH
Figure 36. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP610.SAM
Typical Electrical Characteristics (continued)
25 , TRANSCONDUCTANCE (SIEMENS)
VDS = 10V
20
T J = -55C 25C
V GS = 10V tp
L
+ V DD -
15
125C
t p is adjusted to reach the desired peak inductive current, I L . tp IL BV DSS
10
5
V DD
g 0 0 5 10 15 20 ID , DRAIN CURRENT (A) 25 30
Figure 13. Transconductance Variation with Drain Current and Temperature.
FS
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
200 100 I D , DRAIN CURRENT (A) 50
RD
S
(O
Lim N)
it
10 10 1m
s
0
s
s
10 5
10
V GS = 20V
2 1 0.5 1 2 3
10 0m DC s
ms
SINGLE PULSE T C = 25C
5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V)
100 150
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R JC = 1.5 C/W
0.1
0.05 P(pk)
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * R JC (t) Duty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t1 ,TIME (ms) 10 20 50 100 200 500 1000
0.02
0.05
Figure 16. Transient Thermal Response Curve.
NDP610.SAM

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